- ion-implantation device
- ионно-имплантированный прибор
The New English-Russian Dictionary of Radio-electronics. F.V Lisovsky . 2005.
The New English-Russian Dictionary of Radio-electronics. F.V Lisovsky . 2005.
Ion implantation — is a materials engineering process by which ions of a material can be implanted into another solid, thereby changing the physical properties of the solid. Ion implantation is used in semiconductor device fabrication and in metal finishing, as… … Wikipedia
Implantation — may have the following meanings. Implantation (human embryo), an event that occurs early in human pregnancy in which the human embryo adheres to the wall of the uterus Ion implantation, insertion of ions, in semiconductor device fabrication… … Wikipedia
Ion beam — An ion beam is a type of particle beam consisting of ions. Ion beams have many uses in electronics manufacturing (principally ion implantation) and other industries. Today s ion beam sources are typically derived from the mercury vapor thrusters… … Wikipedia
ion implanted MOS device — jonais implantuotas MOP įtaisas statusas T sritis radioelektronika atitikmenys: angl. ion implanted MOS device vok. Ionenimplantations MOS Gerät, n rus. ионно имплантированный МОП прибор, m pranc. dispositif MOS à implantation ionique, m … Radioelektronikos terminų žodynas
Semiconductor device fabrication — Semiconductor manufacturing processes 10 µm 1971 3 µm 1975 1.5 µm 1982 … Wikipedia
Focused ion beam — Focused ion beam, also known as FIB, is a technique used particularly in the semiconductor and materials science fields for site specific analysis, deposition, and ablation of materials. The FIB is a scientific instrument that resembles a… … Wikipedia
Deep reactive-ion etching — (DRIE) is a highly anisotropic etch process used to create deep penetration, steep sided holes and trenches in wafers, with aspect ratios of 20:1 or more. It was developed for microelectromechanical systems (MEMS), which require these features,… … Wikipedia
dispositif MOS à implantation ionique — jonais implantuotas MOP įtaisas statusas T sritis radioelektronika atitikmenys: angl. ion implanted MOS device vok. Ionenimplantations MOS Gerät, n rus. ионно имплантированный МОП прибор, m pranc. dispositif MOS à implantation ionique, m … Radioelektronikos terminų žodynas
Silvaco — Infobox Company company name = Silvaco International company company type = Private Company| foundation = 1984 location = key people = Dr Ivan Pesic, President/CEO industry = Software Programming homepage = [http://www.silvaco.com/… … Wikipedia
radiation — radiational, adj. /ray dee ay sheuhn/, n. 1. Physics. a. the process in which energy is emitted as particles or waves. b. the complete process in which energy is emitted by one body, transmitted through an intervening medium or space, and… … Universalium
spectroscopy — spectroscopist /spek tros keuh pist/, n. /spek tros keuh pee, spek treuh skoh pee/, n. the science that deals with the use of the spectroscope and with spectrum analysis. [1865 70; SPECTRO + SCOPY] * * * Branch of analysis devoted to identifying… … Universalium